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Imaging Defects in Antimonide Structure and Identifying the Causes
(2019-12-14)
This thesis is divided into three studies, all using microscopy techniques. All the structures were grown by molecular beam epitaxy.
In the first study, we compared two InSb quantum well devices with the same structure. ...
Aligned Set of STM Images
(2020-08-06)
A movie generated from 22 constant-current scanning tunneling microscope images acquired over 8 hours on August 14, 2017. . Bias voltage –1.00 V, tunneling current 1.0 pA. Trace images. Each image has been corrected to ...
Energy band structure of lithium by the tight-binding method /
(The University of Oklahoma., 1967)
Novel phenomena in confined electronic systems.
(2007)
Modern experimental methods have made it possible for physicists to investigate matter in extreme conditions. Two of the most extreme conditions are low temperature and low dimensionality. Fabricated semiconductor or metal ...
Thermoelectric power of vacancies in aluminum /
(The University of Oklahoma., 1973)
Paramagnetic susceptibility of iron, chromium and nickel doped II-VI compounds /
(The University of Oklahoma., 1970)
Far infrared spectra of Rochelle salt /
(The University of Oklahoma., 1971)
Spin resolved cyclotron resonance in indium antimonide quantum wells.
(2005)
In this study we looked at spin resolved cyclotron resonance in InSb quantum wells. InSb is an attractive material for this type of work due to its small electron effective mass (0.014 mo), high intrinsic electron mobility, ...
Electron transport in mesoscopic devices fabricated from indium antimonide/aluminum indium antimonide heterostructures grown by molecular beam epitaxy .
(2004)
Among all binary III-V semiconductors, InSb has the highest intrinsic electron mobility, the narrowest band gap, and the smallest electron effective mass (m* = 0.0139m0). These characteristics make InSb quantum wells (QWs) ...
GROWTH OF WIDE BANDGAP SEMICONDUCTORS USING PULSED ELECTRON BEAM DEPOSITION (PED) PROCESS
(2015)
Wide bandgap materials hold a great potential in solid state lighting, power electronics, and radio frequency (RF) device applications. The cumulative market for all these applications is forecasted to be approximately $75 ...