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Study of hot carrier dynamics and relaxation in metal halide perovskites
(2023-05)
Metal halide perovskites are a promising class of solution-based semiconductors
with significant potential for optoelectronic devices, including hot carrier solar cells
that are proposed to achieve higher efficiency than ...
Theoretical and experimental investigation of IV-VI mid-infrared multiple quantum wells vertical cavity surface emitting lasers.
(2003)
Lateral mode suppression techniques other than reduction of pump spot size need to be developed. Air-post pillar structure and electrically pumped configuration certainly need to be investigated.
Magneto-optical properties of indium antimide based quantum wells.
(2001)
We observe electron spin resonance using FIR laser spectroscopy in symmetric and asymmetric InSb quantum wells over a wide range of magnetic field and the Landau level index. The behavior of the asymmetric wells at low ...
The thermopower of dilute alloys of indium /
(The University of Oklahoma., 1974)
R-matrix theory and device modeling.
(2005)
Novel experimental techniques allow us to fabricate very small semiconductor devices such that the electron mean free path is larger than the size of the device. The macroscopic properties of these quantum mechanical devices ...
Surface states and the gold-n-silicon surface barrier /
(The University of Oklahoma., 1968)
High-precision measurements of alkanethiol self-assembled monolayer structure with scanning tunneling microscopy
(2020)
This thesis describes a measurement methodology and set of tools for measuring scanning tunneling microscope images of crystals at picometer length scales. We use the crystal structure present in high-quality scanning ...
An investigation of the properties of indium antimonide/aluminum(x) indium(1-x) antimonide quantum wells.
(2002)
This work investigates InSb/AlxIn1- xSb quantum wells through the use of Fourier Transform Infrared (FTIR) Spectroscopy. In addition to briefly examining excitonic transitions in undoped square wells, this work covers a ...
Investigation into molecular beam epitaxial growth and characterization of InGaAs structures and InAs superlattices
(2014-05)
(1) InGaAs quantum wells have been experimentally studied for their potential application in electronic devices. The narrow band gap of InGaAs lead to smaller effective masses for electrons and holes, which results in ...