Now showing items 1-2 of 2

    • Carrier dynamics of electrons and holes in moderately doped silicon 

      van Exter, Martin; Grischkowsky, D. (American Physical Society, 1990-06-15)
      A time-domain spectroscopic technique, based on the generation and detection of a collimated beam of subpicosecond broadband terahertz pulses, is used to measure the absorption and dispersion of n- and p-type silicon, with ...
    • Nature of conduction in doped silicon 

      Jeon, Tae-In; Grischkowsky, D. (American Physical Society, 1997-02-10)
      Via ultrafast optoelectronic THz techniques, we are able to test alternative theories of conduction by precisely measuring the complex conductivity of doped silicon from low frequencies to frequencies higher than the plasma ...