Browsing by Subject "Molecular beam epitaxy."
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Electron transport in mesoscopic devices fabricated from indium antimonide/aluminum indium antimonide heterostructures grown by molecular beam epitaxy .
(2004)Among all binary III-V semiconductors, InSb has the highest intrinsic electron mobility, the narrowest band gap, and the smallest electron effective mass (m* = 0.0139m0). These characteristics make InSb quantum wells (QWs) ... -
Molecular beam epitaxial growth and characterization of europium-doped calcium fluoride and fabrication of visible electroluminescent devices on silicon.
(1998)An indirect band-gap precludes the possibility of efficient luminescence from Si. The widespread use of Si in electronics and rapid advances in Si device processing and design justifies the search for Si-based light emitters ... -
Molecular beam epitaxy and characterization of indium antimonide/aluminum indium antimonide heterostructures.
(1998)Two-dimensional electron systems were realized in InSb quantum wells with Al0.09In0.91Sb barrier layers delta-doped with Si. Measured electron mobilities in multiple quantum well structures grown on GaAs(001) substrates ...