Browsing by Subject "438/482"
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Method of Depositing Doped Amorphous Semiconductor on a Substrate
(U.S. Patent and Trademark Office, 1982-09-07)A method of depositing a doped amorphous semiconductor on a base material including the steps of subjecting the base to an environment including a semiconductor gas such as silane or germane, a dopant gas such as arsine, ...