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    • Carrier dynamics of electrons and holes in moderately doped silicon 

      Exter, M.; Grischkowsky, Daniel R.; Grischkowsky, Daniel R. (Physical Review B, 1990-06-15)
      A time-domain spectroscopic technique, based on the generation and detection of a collimated beam of subpicosecond broadband terahertz pulses, is used to measure the absorption and dispersion of n- and p-type silicon, with ...