Now showing items 1-1 of 1

    • Carrier dynamics of electrons and holes in moderately doped silicon 

      van Exter, Martin; Grischkowsky, D. (American Physical Society, 1990-06-15)
      A time-domain spectroscopic technique, based on the generation and detection of a collimated beam of subpicosecond broadband terahertz pulses, is used to measure the absorption and dispersion of n- and p-type silicon, with ...