Weng, BinbinQiu, JijinZhao, LihuaChang, CalebShi, Zhisheng2015-03-312016-03-302015-03-312016-03-302014-01Weng, Binbin, et al. (2014) Theoretical D* Optimization of N+-p Pb1-xSnxSe Long-Wavelength (8-11 μm) Photovoltaic Detector at 77K. Detection, V. 2, No. 1: 1-6.http://hdl.handle.net/11244/14240In this work, the study of the influences of lifetime, doping concentration and absorption layer thickness to resistant- area product (R0A) and quantum efficiency of Pb1-xSnxSe photovoltaic detector are presented. Three fundamental current mechanisms including diffusion, generation-recombination, and tunneling models are considered. Using optimal doping concentration and absorption layer thickness parameters, the calculated detectivity (D*) of Pb1-xSnxSe photovoltaic detector is over 1012 cm Hz1/2/W.Copyright © 2014 Binbin Weng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. In accordance of the Creative Commons Attribution License all Copyrights © 2014 are reserved for SCIRP and the owner of the intellectual property Binbin Weng et al. All Copyright © 2014 are guarded by law and by SCIRP as a guardian.Pb1-xSnxSe, Lifetime, Resistant-Area Product, Quantum Efficiency, DetectivityArticle10.4236/detection.2014.21001